FQD10N20CTM

FQD10N20CTM vs FQD10N20CTM FQD10N20C vs FQD10N20CTM--

 
PartNumberFQD10N20CTMFQD10N20CTM FQD10N20CFQD10N20CTM--
DescriptionMOSFET N-CH/200V/10A/QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current7.8 A--
Rds On Drain Source Resistance360 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD10N20C--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time72 ns--
Product TypeMOSFET--
Rise Time92 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesFQD10N20CTM_NL--
Unit Weight0.009184 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD10N20CTM MOSFET N-CH/200V/10A/QFET
ON Semiconductor
ON Semiconductor
FQD10N20CTM MOSFET N-CH 200V 7.8A DPAK
FQD10N20CTM_F080 MOSFET N-CH 200V 7.8A DPAK
FQD10N20CTM FQD10N20C New and Original
FQD10N20CTM-FSC New and Original
FQD10N20CTM-NL New and Original
FQD10N20CTM-CUT TAPE New and Original
FQD10N20CTM-- New and Original
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