FQD2N1

FQD2N100TM vs FQD2N100TF vs FQD2N100

 
PartNumberFQD2N100TMFQD2N100TFFQD2N100
DescriptionMOSFET 1000V N-Channel QFETMOSFET 1000V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1 kV-
Id Continuous Drain Current1.6 A1.6 A-
Rds On Drain Source Resistance7.1 Ohms7.1 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD2N100--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min1.9 S1.9 S-
Fall Time35 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesFQD2N100TM_NL--
Unit Weight0.009184 oz0.011640 oz-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD2N100TM MOSFET 1000V N-Channel QFET
FQD2N100TF MOSFET 1000V N-Channel QFET
FQD2N100 New and Original
FQD2N100TM FAIRCHILD New and Original
FQD2N100TM-CUT TAPE New and Original
FQD2N100TMDKR New and Original
ON Semiconductor
ON Semiconductor
FQD2N100TF MOSFET N-CH 1000V 1.6A DPAK
FQD2N100TM MOSFET N-CH 1000V 1.6A DPAK
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