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| PartNumber | FQD2N100TM | FQD2N100TF | FQD2N100 |
| Description | MOSFET 1000V N-Channel QFET | MOSFET 1000V N-Channel QFET | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 1.6 A | 1.6 A | - |
| Rds On Drain Source Resistance | 7.1 Ohms | 7.1 Ohms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 2.39 mm | 2.39 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | FQD2N100 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 1.9 S | 1.9 S | - |
| Fall Time | 35 ns | 35 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 30 ns | - |
| Factory Pack Quantity | 2500 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | FQD2N100TM_NL | - | - |
| Unit Weight | 0.009184 oz | 0.011640 oz | - |