FQD2N90TM

FQD2N90TM vs FQD2N90TM,FQD2N90,D2N90, vs FQD2N90TM-NL

 
PartNumberFQD2N90TMFQD2N90TM,FQD2N90,D2N90,FQD2N90TM-NL
DescriptionMOSFET 900V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current1.7 A--
Rds On Drain Source Resistance7.2 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD2N90--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.7 S--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.026103 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD2N90TM MOSFET 900V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQD2N90TM MOSFET N-CH 900V 1.7A DPAK
FQD2N90TM,FQD2N90,D2N90, New and Original
FQD2N90TM-NL New and Original
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