FQD4N25T

FQD4N25TM-WS vs FQD4N25TM vs FQD4N25TF

 
PartNumberFQD4N25TM-WSFQD4N25TMFQD4N25TF
DescriptionMOSFET 250V N-Channel QFETMOSFET 250V N-Channel QFETMOSFET N-CH 250V 3A DPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage250 V250 V-
Id Continuous Drain Current3 A3 A-
Rds On Drain Source Resistance1.75 Ohms1.75 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD4N25--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time22 ns22 ns-
Product TypeMOSFETMOSFET-
Rise Time45 ns45 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time6.4 ns6.4 ns-
Typical Turn On Delay Time6.8 ns6.8 ns-
Part # AliasesFQD4N25TM_WSFQD4N25TM_NL-
Unit Weight0.009184 oz0.139332 oz-
Type-MOSFET-
Forward Transconductance Min-2.4 S-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD4N25TM-WS MOSFET 250V N-Channel QFET
FQD4N25TM MOSFET 250V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQD4N25TM MOSFET N-CH 250V 3A DPAK
FQD4N25TM-WS MOSFET N-CH 250V 3A DPAK
FQD4N25TF MOSFET N-CH 250V 3A DPAK
FQD4N25TM-NL New and Original
FQD4N25TM_WS 250V, NCH MOSFET
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