FQD4P25TM stock, FQD4P25TM, FQD4P25TM-WS


PartNumber	FQD4P25TM-WS	FQD4P25TM-TWS	FQD4P25TM
Description	MOSFET 250V 3.1A 2.1Ohm P-Channel	MOSFET P-CH/250V/3.1A/ 2.1OHM	MOSFET P-CH 250V 3.1A DPAK
Manufacturer	ON Semiconductor	ON Semiconductor	FSC
Product Category	MOSFET	MOSFET	FETs - Single
RoHS	Y	-	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TO-252-3	TO-252-3	-
Number of Channels	1 Channel	-	-
Transistor Polarity	P-Channel	-	-
Vds Drain Source Breakdown Voltage	250 V	-	-
Id Continuous Drain Current	3.1 A	-	-
Rds On Drain Source Resistance	2.1 Ohms	-	-
Vgs Gate Source Voltage	30 V	-	-
Minimum Operating Temperature	- 55 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Pd Power Dissipation	45 W	-	-
Configuration	Single	-	-
Channel Mode	Enhancement	-	-
Tradename	QFET	-	-
Packaging	Reel	Reel	-
Height	2.39 mm	2.39 mm	-
Length	6.73 mm	6.73 mm	-
Series	FQD4P25TM_WS	-	-
Transistor Type	1 P-Channel	-	-
Width	6.22 mm	6.22 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Fall Time	27 ns	-	-
Product Type	MOSFET	MOSFET	-
Rise Time	60 ns	-	-
Factory Pack Quantity	2500	2500	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	14 ns	-	-
Typical Turn On Delay Time	9.5 ns	-	-
Part # Aliases	FQD4P25TM_WS	FQD4P25TM_TWS	-
Unit Weight	0.009184 oz	0.011993 oz	-

Search Part Number : "FQD4P25TM", Match & Start with "FQD4P25TM" - Total : 6

Manufacturer	Part #	Description
ON Semiconductor / Fairchild	FQD4P25TM-WS	MOSFET 250V 3.1A 2.1Ohm P-Channel
ON Semiconductor / Fairchild	FQD4P25TM-TWS	MOSFET P-CH/250V/3.1A/ 2.1OHM
ON Semiconductor	FQD4P25TM	MOSFET P-CH 250V 3.1A DPAK
ON Semiconductor	FQD4P25TM-WS	MOSFET P-CH 250V 3.1A DPAK
	FQD4P25TM-NL	New and Original
	FQD4P25TM_WS	IGBT Transistors MOSFET 250V 3.1A 2.1Ohm P-Channel

FQD4P25TM