 |  | |
| PartNumber | FQD4P40TM | FQD4P40TM-AM002 |
| Description | MOSFET 400V P-Channel QFET | MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 400 V | 400 V |
| Id Continuous Drain Current | 2.7 A | 2.7 A |
| Rds On Drain Source Resistance | 3.1 Ohms | 3.1 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FQD4P40 | FQD4P40 |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | - |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 2.5 S | - |
| Fall Time | 37 ns | 37 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 55 ns | 55 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 35 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns |
| Unit Weight | 0.009184 oz | 0.010294 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V |
| Qg Gate Charge | - | 18 nC |
| Tradename | - | QFET |
| Part # Aliases | - | FQD4P40TM_AM002 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD4P40TM | MOSFET 400V P-Channel QFET | |
| FQD4P40TM-AM002 | MOSFET | ||
ON Semiconductor |
FQD4P40TM | MOSFET P-CH 400V 2.7A DPAK | |
| FQD4P40TM-AM002 | MOSFET P-CH 400V 2.7A | ||
| FQD4P40TM-NL | New and Original | ||
| FQD4P40TM_AM002 | New and Original |