FQD6P

FQD6P25TF vs FQD6P25 vs FQD6P25TM

 
PartNumberFQD6P25TFFQD6P25FQD6P25TM
DescriptionMOSFET 250V P-Ch QFETMOSFET P-CH 250V 4.7A DPAK
ManufacturerON Semiconductor-FAIRCHILD
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleSMD/SMT--
Package / CaseTO-252-3-TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current4.7 A--
Rds On Drain Source Resistance820 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR)
Height2.39 mm--
Length6.73 mm--
Transistor Type1 P-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min3 S--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time75 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.139332 oz--
Series--QFET
Part Status--Obsolete
FET Type--P-Channel
Drain to Source Voltage (Vdss)--250V
Current Continuous Drain (Id) @ 25°C--4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--5V @ 250A
Gate Charge (Qg) (Max) @ Vgs--27nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--780pF @ 25V
FET Feature---
Power Dissipation (Max)--2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs--1.1 Ohm @ 2.35A, 10V
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD6P25TF MOSFET 250V P-Ch QFET
FQD6P25 New and Original
ON Semiconductor
ON Semiconductor
FQD6P25TF MOSFET P-CH 250V 4.7A DPAK
FQD6P25TM MOSFET P-CH 250V 4.7A DPAK
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