PartNumber | FQI11N40TU | FQI11P06TU | FQI10N60CTU |
Description | MOSFET 400V N-Channel QFET | MOSFET 60V P-Channel QFET | MOSFET 600V N-Channel Adv Q-FET C-Series |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | E |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 400 V | 60 V | 600 V |
Id Continuous Drain Current | 11.4 A | 11.4 A | 9.5 A |
Rds On Drain Source Resistance | 480 mOhms | 175 mOhms | 730 mOhms |
Vgs Gate Source Voltage | 30 V | 25 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 3.13 W | 3.13 W | 3.13 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 7.88 mm | 7.88 mm | 7.88 mm |
Length | 10.29 mm | 10.29 mm | 10.29 mm |
Transistor Type | 1 N-Channel | 1 P-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | MOSFET |
Width | 4.83 mm | 4.83 mm | 4.83 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 7.6 S | 5.1 S | 8 S |
Fall Time | 60 ns | 45 ns | 77 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 100 ns | 40 ns | 69 ns |
Factory Pack Quantity | 50 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 15 ns | 144 ns |
Typical Turn On Delay Time | 30 ns | 6.5 ns | 23 ns |
Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
Part # Aliases | - | - | FQI10N60CTU_NL |