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FQP12

FQP12N60C vs FQP120N06 vs FQP12N60-TU

 
PartNumberFQP12N60CFQP120N06FQP12N60-TU
DescriptionMOSFET 600V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance650 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation225 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP12N60C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min13 S--
Fall Time90 ns--
Product TypeMOSFET--
Rise Time85 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time155 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FQP12P20 MOSFET 200V P-Channel QFET
FQP12P10 MOSFET 100V P-Channel QFET
FQP12N60C MOSFET 600V N-Ch Q-FET advance C-Series
FQP120N06 New and Original
FQP12N60-TU New and Original
FQP12N60C,12N60C, New and Original
FQP12N60C,FQP12N60 New and Original
FQP12N60C,FQPF12N60C,FQP New and Original
FQP12N60C/FQPF12N60C New and Original
FQP12N60C3 New and Original
FQP12N60C_07 New and Original
FQP12N60C_F080 New and Original
FQP12P20C New and Original
ON Semiconductor
ON Semiconductor 		FQP12N60 MOSFET N-CH 600V 10.5A TO-220
FQP12P10 MOSFET P-CH 100V 11.5A TO-220
FQP12P20 MOSFET P-CH 200V 11.5A TO-220
FQP12N60C IGBT Transistors MOSFET 600V N-Ch Q-FET advance C-Series
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