FQP16N25C

FQP16N25C vs FQP16N25C,FQP16N25 vs FQP16N25C,FQP16N25,16N25

 
PartNumberFQP16N25CFQP16N25C,FQP16N25FQP16N25C,FQP16N25,16N25
DescriptionMOSFET 250V N-Channel Advance Q-FET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current15.6 A--
Rds On Drain Source Resistance270 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation139 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP16N25C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10.5 S--
Fall Time105 ns--
Product TypeMOSFET--
Rise Time130 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time135 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP16N25C MOSFET 250V N-Channel Advance Q-FET
ON Semiconductor
ON Semiconductor
FQP16N25C MOSFET N-CH 250V 15.6A TO-220
FQP16N25C,FQP16N25 New and Original
FQP16N25C,FQP16N25,16N25 New and Original
FQP16N25C,P16N25C, New and Original
FQP16N25C_F105 New and Original
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