| PartNumber | FQP17P10 | FQP17P06 |
| Description | MOSFET 100V P-Channel QFET | MOSFET 60V P-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V |
| Id Continuous Drain Current | 16.5 A | 17 A |
| Rds On Drain Source Resistance | 190 mOhms | 120 mOhms |
| Vgs Gate Source Voltage | 30 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 100 W | 79 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | QFET | QFET |
| Packaging | Tube | Tube |
| Height | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FQP17P10 | FQP17P06 |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 9.9 S | 9.3 S |
| Fall Time | 100 ns | 60 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 200 ns | 100 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 22 ns |
| Typical Turn On Delay Time | 17 ns | 13 ns |
| Part # Aliases | FQP17P10_NL | FQP17P06_NL |
| Unit Weight | 0.063493 oz | 0.063493 oz |