FQP4N90C

FQP4N90C vs FQP4N90C FQPF4N90C vs FQP4N90C,4N90C,

 
PartNumberFQP4N90CFQP4N90C FQPF4N90CFQP4N90C,4N90C,
DescriptionMOSFET 900V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance4.2 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP4N90C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP4N90C MOSFET 900V N-Ch Q-FET advance C-Series
ON Semiconductor
ON Semiconductor
FQP4N90C MOSFET N-CH 900V 4A TO-220
FQP4N90C FQPF4N90C New and Original
FQP4N90C,4N90C, New and Original
FQP4N90C,FQP4N90,4N90,FQ New and Original
FQP4N90C,FQP8N60C New and Original
FQP4N90C,FQPF4N90C,FDP04 New and Original
FQP4N90C-TU New and Original
FQP4N90C. New and Original
FQP4N90C/6N80C/3N80C New and Original
FQP4N90C/FQPF6N90C New and Original
FQP4N90CT New and Original
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