 |  | |
| PartNumber | FQPF2N80 | FQPF2N80YDTU |
| Description | MOSFET 800V N-Channel QFET | MOSFET QF 800V 6.3OHM TO220F |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V |
| Id Continuous Drain Current | 1.5 A | 1.5 A |
| Rds On Drain Source Resistance | 6.3 Ohms | 4.9 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 35 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | QFET | QFET |
| Packaging | Tube | Tube |
| Height | 16.07 mm | 16.07 mm |
| Length | 10.36 mm | 10.36 mm |
| Series | FQPF2N80 | FQPF2N80YDTU |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - |
| Width | 4.9 mm | 4.9 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 2.2 S | 2.2 S |
| Fall Time | 28 ns | 28 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 30 ns | 30 ns |
| Factory Pack Quantity | 1000 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 25 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Unit Weight | 0.080072 oz | 0.090478 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V |
| Qg Gate Charge | - | 12 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQPF2N80 | MOSFET 800V N-Channel QFET | |
| FQPF2N80YDTU | MOSFET QF 800V 6.3OHM TO220F | ||
ON Semiconductor |
FQPF2N80 | MOSFET N-CH 800V 1.5A TO-220F | |
| FQPF2N80YDTU | Darlington Transistors MOSFET NCH 800V 2A MOSFET | ||
| FQPF2N80C | New and Original | ||
| FQPF2N80C,FQPF2N80,2N80, | New and Original |