PartNumber | FQPF4N80 | FQPF4N25 | FQPF4N60 |
Description | MOSFET 800V N-Channel QFET | MOSFET | MOSFET 600V N-Channel QFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 250 V | 600 V |
Id Continuous Drain Current | 2.2 A | 2.8 A | 2.6 A |
Rds On Drain Source Resistance | 3.6 Ohms | 1.75 Ohms | 2.2 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 43 W | 32 W | 36 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | MOSFET |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 2.7 S | - | 3.1 S |
Fall Time | 35 ns | 22 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 45 ns | 45 ns | 45 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | 6.4 ns | 25 ns |
Typical Turn On Delay Time | 16 ns | 6.8 ns | 13 ns |
Part # Aliases | FQPF4N80_NL | - | - |
Unit Weight | 0.090478 oz | 0.074950 oz | 0.074950 oz |