FQPF6N80

FQPF6N80C vs FQPF6N80CT vs FQPF6N80

 
PartNumberFQPF6N80CFQPF6N80CTFQPF6N80
DescriptionMOSFET 800V N-Ch Q-FET advance C-SeriesMOSFET 800V N-Ch Adv Q-FET C-SeriesMOSFET N-CH 800V 3.3A TO-220F
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current5.5 A5.5 A-
Rds On Drain Source Resistance2.5 Ohms2.5 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation51 W51 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height16.07 mm16.3 mm-
Length10.36 mm10.67 mm-
SeriesFQPF6N80CFQPF6N80C-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width4.9 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min5.4 S5.4 S-
Fall Time44 ns44 ns-
Product TypeMOSFETMOSFET-
Rise Time65 ns65 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time47 ns47 ns-
Typical Turn On Delay Time26 ns26 ns-
Part # AliasesFQPF6N80C_NL--
Unit Weight0.080072 oz0.080072 oz-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQPF6N80C MOSFET 800V N-Ch Q-FET advance C-Series
FQPF6N80CT MOSFET 800V N-Ch Adv Q-FET C-Series
FQPF6N80T MOSFET N-CH/800V/6A/QFET
ON Semiconductor
ON Semiconductor
FQPF6N80 MOSFET N-CH 800V 3.3A TO-220F
FQPF6N80C MOSFET N-CH 800V 5.5A TO-220F
FQPF6N80T MOSFET N-CH 800V 3.3A TO-220F
FQPF6N80CT MOSFET N-CH 800V 5.5A TO-220F
FQPF6N80C 2SK4013 New and Original
FQPF6N80C,6N80C, New and Original
FQPF6N80C,6N80C,F6N80C, New and Original
FQPF6N80C,FQPF6N80,FQPF6 New and Original
FQPF6N80C/2SK2605 New and Original
FQPF6N80C/5N80/7N80/8N80 New and Original
FQPF6N80C/70C/60C New and Original
Top