FQPF8N80

FQPF8N80C vs FQPF8N80 vs FQPF8N80C,8N80C

 
PartNumberFQPF8N80CFQPF8N80FQPF8N80C,8N80C
DescriptionMOSFET 800V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance1.55 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation59 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.07 mm--
Length10.36 mm--
SeriesFQPF8N80C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.6 S--
Fall Time70 ns--
Product TypeMOSFET--
Rise Time110 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns--
Typical Turn On Delay Time40 ns--
Part # AliasesFQPF8N80C_NL--
Unit Weight0.080072 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQPF8N80C MOSFET 800V N-Ch Q-FET advance C-Series
FQPF8N80CYDTU MOSFET HIGH VOLTAGE
FQPF8N80 New and Original
FQPF8N80C,8N80C New and Original
FQPF8N80C,8N80C, New and Original
FQPF8N80C,FQP8N80C,8N80C New and Original
FQPF8N80C,FQPF7N80C New and Original
FQPF8N80C/SL8N80F New and Original
FQPF8N80C-- New and Original
ON Semiconductor
ON Semiconductor
FQPF8N80C MOSFET N-CH 800V 8A TO-220F
FQPF8N80CYDTU MOSFET N-CH 800V 8A TO-220F
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