PartNumber | FQPF9N90CT | FQPF9N90C |
Description | MOSFET 900V N-Chan Advance Q-FET C-Series | MOSFET N-CH/900V/8A |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | E |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220FP-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | 900 V |
Id Continuous Drain Current | 8 A | 8 A |
Rds On Drain Source Resistance | 1.4 Ohms | 1.4 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 68 W | 68 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Tube | Tube |
Height | 16.3 mm | 16.07 mm |
Length | 10.67 mm | 10.36 mm |
Series | FQPF9N90C | QFET |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 4.7 mm | 4.9 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 75 ns | 75 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 120 ns | 120 ns |
Factory Pack Quantity | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 100 ns | 100 ns |
Typical Turn On Delay Time | 50 ns | 50 ns |
Unit Weight | 0.080072 oz | 0.090478 oz |
Type | - | MOSFET |
Forward Transconductance Min | - | 9.2 S |
Part # Aliases | - | FQPF9N90C_NL |