 |  | | |
| PartNumber | FQPF9N90CT | FQPF9N90CT,FQPF9N90C | FQPF9N90CT-- |
| Description | MOSFET 900V N-Chan Advance Q-FET C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 1.4 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQPF9N90C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 75 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 120 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Unit Weight | 0.080072 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQPF9N90CT | MOSFET 900V N-Chan Advance Q-FET C-Series | |
ON Semiconductor |
FQPF9N90CT | MOSFET N-CH 900V 8A TO-220F | |
| FQPF9N90CT,FQPF9N90C | New and Original | ||
| FQPF9N90CT-- | New and Original |