 |  | | |
| PartNumber | FS150R12KT3 | FS150R12KT3BOSA1 | FS150R12KT3G |
| Description | IGBT Modules N-CH 1.2KV 200A | IGBT MODULE 1200V 200A CHASS MNT | |
| Manufacturer | Infineon | - | EUPEC |
| Product Category | IGBT Modules | - | Module |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.15 V | - | - |
| Continuous Collector Current at 25 C | 200 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 700 W | - | - |
| Package / Case | Econo 3 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 122 mm | - | - |
| Width | 62 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FS150R12KT3BOSA1 SP000100440 | - | - |
| Unit Weight | 10.582189 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
FS150R12KT3 | IGBT Modules N-CH 1.2KV 200A | |
| FS150R12KT3BOSA1 | IGBT MODULE 1200V 200A CHASS MNT | ||
| FS150R12KT3G | New and Original | ||
| FS150R12KT3 | IGBT Modules N-CH 1.2KV 200A |