PartNumber | FS200R07A5E3S6BPSA1 | FS200R07A1E3BOSA1 | FS200R07A1E3 |
Description | IGBT Modules | IGBT 650V 250A 790W | IGBT Modules |
Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
Product Category | IGBT Modules | IGBTs - Modules | IGBTs - Modules |
RoHS | Y | - | - |
Packaging | Tray | - | - |
Brand | Infineon Technologies | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 12 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FS200R07A5E3_S6 SP001150884 | - | - |
Series | - | - | FS200R07A1 |
Package Case | - | Module | HybridPack1 |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | Module | - |
Input | - | Standard | - |
Configuration | - | Three Phase Inverter | 3-Phase |
Power Max | - | 790W | - |
Current Collector Ic Max | - | 250A | - |
Voltage Collector Emitter Breakdown Max | - | 650V | - |
Current Collector Cutoff Max | - | 1mA | - |
IGBT Type | - | - | - |
Vce on Max Vge Ic | - | 1.9V @ 15V, 200A | - |
Input Capacitance Cies Vce | - | 13nF @ 25V | - |
NTC Thermistor | - | Yes | - |
Product | - | - | IGBT Silicon Modules |
Part Aliases | - | - | SP000663442 |
Mounting Style | - | - | Through Hole |
Pd Power Dissipation | - | - | 790 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 40 C |
Collector Emitter Voltage VCEO Max | - | - | 650 V |
Collector Emitter Saturation Voltage | - | - | 1.7 V |
Continuous Collector Current at 25 C | - | - | 250 A |
Gate Emitter Leakage Current | - | - | 400 nA |
Maximum Gate Emitter Voltage | - | - | +/- 20 V |