FS50R12KE

FS50R12KE3 vs FS50R12KE3BOSA1 vs FS50R12KE3G

 
PartNumberFS50R12KE3FS50R12KE3BOSA1FS50R12KE3G
DescriptionIGBT Modules 1200V 50A 3-PHASEIGBT MODULE 1200V 50A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C75 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation270 W--
Package / CaseEconoPACK 2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFS50R12KE3BOSA1 SP000100413--
Unit Weight6.349313 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FS50R12KE3 IGBT Modules 1200V 50A 3-PHASE
FS50R12KE3BOSA1 IGBT MODULE 1200V 50A
FS50R12KE3G New and Original
FS50R12KE3 IGBT Modules 1200V 50A 3-PHASE
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