FS800R07A2E3B

FS800R07A2E3B32BOSA1 vs FS800R07A2E3B31BOSA1 vs FS800R07A2E3BOSA2

 
PartNumberFS800R07A2E3B32BOSA1FS800R07A2E3B31BOSA1FS800R07A2E3BOSA2
DescriptionIGBT ModulesIGBT MODULES
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.4 V--
Continuous Collector Current at 25 C800 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1.5 kW--
Package / CaseHybirdPack2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
TechnologySi--
BrandInfineon Technologies--
Mounting StyleThrough Hole--
Maximum Gate Emitter Voltage20 V--
Moisture SensitiveYes--
Product TypeIGBT Modules--
Factory Pack Quantity3--
SubcategoryIGBTs--
Part # AliasesFS800R07A2E3_B32 SP001240894--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FS800R07A2E3B32BOSA1 IGBT Modules
Infineon Technologies
Infineon Technologies
FS800R07A2E3B31BOSA1 IGBT MODULES
FS800R07A2E3B32BOSA1 IGBT MODULES
FS800R07A2E3BOSA2 New and Original
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