FZ1200R33KF2C

FZ1200R33KF2C vs FZ1200R33KF2C-B3-S2 vs FZ1200R33KF2C-S1

 
PartNumberFZ1200R33KF2CFZ1200R33KF2C-B3-S2FZ1200R33KF2C-S1
DescriptionIGBT Modules 3300V 1200A SINGLE
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ConfigurationTriple Common Emitter Common Gate--
Collector Emitter Voltage VCEO Max3300 V--
Collector Emitter Saturation Voltage3.4 V--
Continuous Collector Current at 25 C2000 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation14.5 kW--
Package / CaseIS5a ( 62 mm )-9--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height38 mm--
Length190 mm--
Width140 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity1--
SubcategoryIGBTs--
Part # AliasesFZ1200R33KF2CNOSA1 SP000100603--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FZ1200R33KF2C IGBT Modules 3300V 1200A SINGLE
FZ1200R33KF2CNOSA1 MODULE IGBT A-IHV190-3
FZ1200R33KF2C IGBT Modules 3300V 1200A SINGLE
FZ1200R33KF2C-B3-S2 New and Original
FZ1200R33KF2C-S1 New and Original
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