FZT853

FZT853TA vs FZT853 vs FZT853AT

 
PartNumberFZT853TAFZT853FZT853AT
DescriptionBipolar Transistors - BJT NPN High CurrentBIPOLAR TRANSISTOR, NPN, 100V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:100V, Transition Frequency ft:130MHz, Power Dissipation Pd:3W, DC Collector Current:6A, DC Current Gain
ManufacturerDiodes IncorporatedN/A-
Product CategoryBipolar Transistors - BJTIC Chips-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO200 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage340 mV--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT130 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT853--
DC Current Gain hFE Max100--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current6 A--
DC Collector/Base Gain hfe Min20 at 10 A, 2 V--
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
FZT853TA Bipolar Transistors - BJT NPN High Current
FZT853TA Bipolar Transistors - BJT NPN High Current
FZT853 BIPOLAR TRANSISTOR, NPN, 100V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:100V, Transition Frequency ft:130MHz, Power Dissipation Pd:3W, DC Collector Current:6A, DC Current Gain
FZT853AT New and Original
FZT853TAPBF New and Original
FZT853TA CT INSTOCK
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