FZT949T

FZT949TA vs FZT949TA , 1T409 vs FZT949TA/TC

 
PartNumberFZT949TAFZT949TA , 1T409FZT949TA/TC
DescriptionBipolar Transistors - BJT PNP HighCt Low Sat
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 7 V--
Collector Emitter Saturation Voltage- 440 mV--
Maximum DC Collector Current- 20 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT949--
DC Current Gain hFE Max100--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 5.5 A--
DC Collector/Base Gain hfe Min75--
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
FZT949TA Bipolar Transistors - BJT PNP HighCt Low Sat
FZT949TA Bipolar Transistors - BJT PNP HighCt Low Sat
FZT949TA , 1T409 New and Original
FZT949TA/TC New and Original
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