FZT968T

FZT968TA vs FZT968TA , 1WMB2R2 vs FZT968TA/TC

 
PartNumberFZT968TAFZT968TA , 1WMB2R2FZT968TA/TC
DescriptionBipolar Transistors - BJT PNP HighCt HighV
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 12 V--
Collector Base Voltage VCBO- 15 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 360 mV--
Maximum DC Collector Current6 A--
Gain Bandwidth Product fT80 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT968--
DC Current Gain hFE Max300--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 6 A--
DC Collector/Base Gain hfe Min300 at 10 mA, 1 V, 300 at 500 mA, 1 V, 200 at 5 A, 1 V, 150 at 10 A, 1 V--
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
FZT968TA Bipolar Transistors - BJT PNP HighCt HighV
FZT968TA Bipolar Transistors - BJT PNP HighCt HighV
FZT968TA , 1WMB2R2 New and Original
FZT968TA/TC New and Original
Top