PartNumber | GA08JT17-247 | GA08W00000X | GA09-10W |
Description | MOSFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A | ||
Manufacturer | GeneSiC Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | SiC | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 1.7 kV | - | - |
Id Continuous Drain Current | 8 A | - | - |
Rds On Drain Source Resistance | 230 mOhms | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 91 W | - | - |
Configuration | Single | - | - |
Packaging | Tube | - | - |
Series | GA08JT17 | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | GeneSiC Semiconductor | - | - |
Fall Time | 50 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 28 ns | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 73 ns | - | - |
Typical Turn On Delay Time | 30 ns | - | - |
Unit Weight | 0.225401 oz | - | - |