GA0

GA08JT17-247 vs GA08W00000X vs GA09-10W

 
PartNumberGA08JT17-247GA08W00000XGA09-10W
DescriptionMOSFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A
ManufacturerGeneSiC Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySiC--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.7 kV--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance230 mOhms--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation91 W--
ConfigurationSingle--
PackagingTube--
SeriesGA08JT17--
Transistor Type1 N-Channel--
BrandGeneSiC Semiconductor--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time28 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time73 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.225401 oz--
  • Start with
  • GA0 139
Manufacturer Part # Description RFQ
GeneSiC Semiconductor
GeneSiC Semiconductor
GA08JT17-247 MOSFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A
GA08JT17-247 IGBT Transistors MOSFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A
GA08W00000X New and Original
GA09-10W New and Original
GA09-3W New and Original
GA092 New and Original
GA098 New and Original
GA098-B New and Original
GA099-B New and Original
GA0DA00250 New and Original
GA0T12-V-G-08 New and Original
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