| PartNumber | GB01SLT12-214 | GB01SLT12-220 | GB01SLT06-214 |
| Description | Schottky Diodes & Rectifiers 1200V 2.5A Standard | Schottky Diodes & Rectifiers 1200V 1A SiC Schottky Rectifier | Schottky Diodes & Rectifiers 650V 2.5A Standard |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| RoHS | Y | Y | Y |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | DO-214AA-2 | TO-220 | DO-214AA-2 |
| If Forward Current | 2.5 A | 1 A | 2.5 A |
| Vrrm Repetitive Reverse Voltage | 1.2 kV | 1200 V | 650 V |
| Vf Forward Voltage | 1.6 V | 1.8 V | 1.5 V |
| Ifsm Forward Surge Current | 10 A | 10 A | 10 A |
| Configuration | Single | - | Single |
| Technology | SiC | SiC | SiC |
| Ir Reverse Current | 5 uA | 4 uA | 1 uA |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | GB01SLT12 | GB01SLT12 | GB01SLT06 |
| Packaging | Reel | Tube | Reel |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Pd Power Dissipation | 42 W | 42 W | 64 W |
| Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| Factory Pack Quantity | 2500 | 50 | 2500 |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |
| Vr Reverse Voltage | 1.2 kV | - | 650 V |
| Unit Weight | 0.008219 oz | 0.081130 oz | 0.008748 oz |
| Operating Temperature Range | - | - 55 C to + 175 C | - |
| trr Reverse Recovery time | - | 17 ns | - |