| PartNumber | GB02SHT01-46 | GB02SHT03-46 | GB02SHT06-46 |
| Description | Schottky Diodes & Rectifiers SiC Schottky Diode | Schottky Diodes & Rectifiers SiC Schottky Diode | Schottky Diodes & Rectifiers SiC Schottky Diode |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| RoHS | Y | Y | Y |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-46-2 | TO-46-2 | TO-46-2 |
| If Forward Current | 4 A | 4 A | 4 A |
| Vrrm Repetitive Reverse Voltage | 100 V | 300 V | 600 V |
| Vf Forward Voltage | 1.6 V | 2.6 V | 1.6 V |
| Ifsm Forward Surge Current | 10 A | 10 A | 10 A |
| Configuration | Single | Single | Single |
| Technology | SiC | SiC | SiC |
| Ir Reverse Current | 1 uA | 5 uA | 1 uA |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 225 C | + 225 C | + 225 C |
| Packaging | Bulk | Bulk | Bulk |
| Operating Temperature Range | - 55 C to + 225 C | - | - 55 C to + 225 C |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Pd Power Dissipation | 64 W | 64 W | 64 W |
| Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |