| PartNumber | GC2X10MPS12-247 | GC2X15MPS12-247 | GC2X100MPS06-227 |
| Description | Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 20A TO-247-3 | Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 30A TO-247-3 | Schottky Diodes & Rectifiers |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| RoHS | Y | Y | Y |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Mounting Style | Through Hole | Through Hole | Screw Mount |
| Package / Case | TO-247-3 | TO-247-3 | SOT-227-4 |
| If Forward Current | 100 A | 150 A | 418 A |
| Vrrm Repetitive Reverse Voltage | 1200 V | 1200 V | 650 V |
| Vf Forward Voltage | 1.5 V | 1.5 V | 1.5 V |
| Ifsm Forward Surge Current | 82 A | 100 A | 800 A |
| Configuration | Dual | Dual | Dual |
| Technology | SiC | SiC | SiC |
| Ir Reverse Current | 1 uA | 1.4 uA | 2 uA |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Packaging | Tube | Tube | Tube |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Pd Power Dissipation | 672 W | 1024 W | 1.034 kW |
| Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| Factory Pack Quantity | 30 | 30 | 10 |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |
| Vr Reverse Voltage | 1200 V | 1200 V | 650 V |