PartNumber | GS61008P-E05 | GS61008P-E04-TY | GS61008P-E03-TY |
Description | IGBT Transistors MOSFET 100V 90A E-Mode GaN Preproduction Units | MOSFET 100V, 90A, E-Mode Preproduction Units | |
Manufacturer | GaN Systems | - | - |
Product Category | Transistors - FETs, MOSFETs - Single | - | - |
Packaging | Reel | - | - |
Mounting Style | SMD/SMT | - | - |
Technology | GaN | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
Rds On Drain Source Resistance | 7.4 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Qg Gate Charge | 12 nC | - | - |
Channel Mode | Enhancement | - | - |