GS881E36CD-2

GS881E36CD-200 vs GS881E36CD-200I vs GS881E36CD-200IV

 
PartNumberGS881E36CD-200GS881E36CD-200IGS881E36CD-200IV
DescriptionSRAM 2.5 or 3.3V 256K x 32 8MSRAM 2.5 or 3.3V 256K x 32 8MSRAM 1.8/2.5V 256K x 32 8M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
PackagingTrayTrayTray
SeriesGS881E36CDGS881E36CDGS881E36CD
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity727266
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
Memory Size--9 Mbit
Organization--256 k x 36
Access Time--6.5 ns
Maximum Clock Frequency--200 MHz
Interface Type--Parallel
Supply Voltage Max--2.7 V
Supply Voltage Min--1.7 V
Supply Current Max--145 mA, 170 mA
Minimum Operating Temperature--- 40 C
Maximum Operating Temperature--+ 85 C
Mounting Style--SMD/SMT
Package / Case--BGA-165
Memory Type--SDR
Type--DCD
Manufacturer Part # Description RFQ
GSI Technology
GSI Technology
GS881E36CD-200 SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CD-200I SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CD-250IV SRAM 1.8/2.5V 256K x 32 8M
GS881E36CD-250V SRAM 1.8/2.5V 256K x 32 8M
GS881E36CD-250I SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CD-200V SRAM 1.8/2.5V 256K x 32 8M
GS881E36CD-200IV SRAM 1.8/2.5V 256K x 32 8M
GS881E36CD-250 SRAM 2.5 or 3.3V 256K x 32 8M
Top