 | | | |
| PartNumber | GS881E36CGD-200IV | GS881E36CGD-200I | GS881E36CGD-200 |
| Description | SRAM 1.8/2.5V 256K x 36 9M | SRAM 2.5 or 3.3V 256K x 36 9M | SRAM 2.5 or 3.3V 256K x 36 9M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 9 Mbit | 9 Mbit | 9 Mbit |
| Organization | 256 k x 36 | 256 k x 36 | 256 k x 36 |
| Access Time | 6.5 ns | 6.5 ns | 6.5 ns |
| Maximum Clock Frequency | 200 MHz | 200 MHz | 200 MHz |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 2.7 V | 3.6 V | 3.6 V |
| Supply Voltage Min | 1.7 V | 2.3 V | 2.3 V |
| Supply Current Max | 145 mA, 170 mA | 160 mA, 190 mA | 140 mA, 170 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | 0 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 70 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | BGA-165 | BGA-165 | BGA-165 |
| Packaging | Tray | Tray | Tray |
| Memory Type | SDR | SDR | SDR |
| Series | GS881E36CGD | GS881E36CGD | GS881E36CGD |
| Type | DCD | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 66 | 72 | 72 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
GSI Technology |
GS881E36CGD-200IV | SRAM 1.8/2.5V 256K x 36 9M | |
| GS881E36CGD-250 | SRAM 2.5 or 3.3V 256K x 36 9M | ||
| GS881E36CGD-200I | SRAM 2.5 or 3.3V 256K x 36 9M | ||
| GS881E36CGD-200 | SRAM 2.5 or 3.3V 256K x 36 9M | ||
| GS881E36CGD-250I | SRAM 2.5 or 3.3V 256K x 36 9M | ||
| GS881E36CGD-200V | SRAM 1.8/2.5V 256K x 36 9M | ||
| GS881E36CGD-250V | SRAM 1.8/2.5V 256K x 36 9M | ||
| GS881E36CGD-250IV | SRAM 1.8/2.5V 256K x 36 9M |