PartNumber | GTVA107001EC-V1-R0 | GTVA104001FA-V1-R0 | GTVA104001FA P1 |
Description | RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W | RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 400W | |
Manufacturer | Cree, Inc. | Cree, Inc. | - |
Product Category | RF JFET Transistors | RF JFET Transistors | - |
RoHS | Y | Y | - |
Transistor Type | HEMT | HEMT | - |
Technology | GaN SiC | GaN SiC | - |
Gain | 18 dB | 19 dB | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - 10 V to 2 V | - |
Id Continuous Drain Current | 10 A | 4.6 A | - |
Output Power | 890 W | 400 W | - |
Maximum Drain Gate Voltage | - | - | - |
Mounting Style | Screw Mount | Flange Mount | - |
Package / Case | H-36248-2 | H-37265J-2 | - |
Packaging | Reel | Reel | - |
Operating Frequency | 960 MHz to 1.215 GHz | 960 MHz to 1.215 GHz | - |
Brand | Wolfspeed / Cree | Wolfspeed / Cree | - |
Product Type | RF JFET Transistors | RF JFET Transistors | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | Transistors | Transistors | - |
Vgs th Gate Source Threshold Voltage | - 3 V | - 3 V | - |
Development Kit | - | LTN/GTVA104001FA-V1 | - |