PartNumber | HFA3096BZ | HFA3096BZ96 |
Description | Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL | RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N |
Manufacturer | Renesas Electronics | Renesas Electronics |
Product Category | Bipolar Transistors - BJT | RF Bipolar Transistors |
RoHS | Y | Y |
Package / Case | SOIC-Narrow-16 | SOIC-Narrow-16 |
Transistor Polarity | NPN, PNP | NPN/PNP |
Configuration | Quint | Quint |
Collector Emitter Voltage VCEO Max | 8 V | 8 V |
Collector Base Voltage VCBO | 12 V | 12 V |
Emitter Base Voltage VEBO | 5.5 V | 5.5 V |
Maximum DC Collector Current | 0.065 A | 0.065 A |
Gain Bandwidth Product fT | 8000 MHz | 8000 MHz |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 125 C | + 125 C |
Series | HFA3096 | HFA3096 |
Height | 1.5 mm | 1.5 mm |
Length | 10 mm | 10 mm |
Packaging | Tube | Reel |
Width | 4 mm | 4 mm |
Brand | Renesas / Intersil | Renesas / Intersil |
DC Collector/Base Gain hfe Min | 40 at 10 mA, 2 V at NPN, 20 at 10 mA, 2 V at PNP | 40 |
Moisture Sensitive | Yes | Yes |
Pd Power Dissipation | 150 mW | 150 mW |
Product Type | BJTs - Bipolar Transistors | RF Bipolar Transistors |
Factory Pack Quantity | 48 | 2500 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.004938 oz | 0.004938 oz |
Transistor Type | - | Bipolar |
Technology | - | Si |
Continuous Collector Current | - | 0.065 A |
DC Current Gain hFE Max | - | 40 at 10 mA at 2 V at NPN, 20 at 10 mA at 2 V at PNP |
Operating Frequency | - | 8 GHz, 5.5 GHz |
Type | - | RF Bipolar Small Signal |