HGTG11

HGTG11N120CND vs HGTG11N120CN

 
PartNumberHGTG11N120CNDHGTG11N120CN
DescriptionIGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst DdeIGBT Transistors 43A 1200V N-Ch
ManufacturerON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBT Transistors
RoHSEE
TechnologySiSi
Package / CaseTO-247-3TO-247-3
Mounting StyleThrough HoleThrough Hole
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max1200 V1200 V
Collector Emitter Saturation Voltage2.1 V2.1 V
Maximum Gate Emitter Voltage20 V20 V
Continuous Collector Current at 25 C43 A43 A
Pd Power Dissipation298 W298 W
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesHGTG11N120CNDHGTG11N120CN
PackagingTubeTube
Continuous Collector Current Ic Max43 A43 A
Height20.82 mm20.82 mm
Length15.87 mm15.87 mm
Width4.82 mm4.82 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Continuous Collector Current55 A55 A
Gate Emitter Leakage Current+/- 250 nA+/- 250 nA
Product TypeIGBT TransistorsIGBT Transistors
Factory Pack Quantity450150
SubcategoryIGBTsIGBTs
Part # AliasesHGTG11N120CND_NLHGTG11N120CN_NL
Unit Weight0.225401 oz0.225401 oz
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTG11N120CND IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
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ON Semiconductor
ON Semiconductor
HGTG11N120CND IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
HGTG11N120CN IGBT 1200V 43A 298W TO247
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