HGTG11N12 stock, HGTG11N12, HGTG11N120CND


PartNumber	HGTG11N120CND	HGTG11N120CN
Description	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde	IGBT Transistors 43A 1200V N-Ch
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	E	E
Technology	Si	Si
Package / Case	TO-247-3	TO-247-3
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	1200 V
Collector Emitter Saturation Voltage	2.1 V	2.1 V
Maximum Gate Emitter Voltage	20 V	20 V
Continuous Collector Current at 25 C	43 A	43 A
Pd Power Dissipation	298 W	298 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	HGTG11N120CND	HGTG11N120CN
Packaging	Tube	Tube
Continuous Collector Current Ic Max	43 A	43 A
Height	20.82 mm	20.82 mm
Length	15.87 mm	15.87 mm
Width	4.82 mm	4.82 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	55 A	55 A
Gate Emitter Leakage Current	+/- 250 nA	+/- 250 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	450	150
Subcategory	IGBTs	IGBTs
Part # Aliases	HGTG11N120CND_NL	HGTG11N120CN_NL
Unit Weight	0.225401 oz	0.225401 oz

Search Part Number : "HGTG11N12", Match & Start with "HGTG11N12" - Total : 12

Manufacturer	Part #	Description
ON Semiconductor / Fairchild	HGTG11N120CND	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
ON Semiconductor / Fairchild	HGTG11N120CN	IGBT Transistors 43A 1200V N-Ch
ON Semiconductor	HGTG11N120CND	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
ON Semiconductor	HGTG11N120CN	IGBT 1200V 43A 298W TO247
	HGTG11N120	New and Original
	HGTG11N120CND 11N120CND	New and Original
	HGTG11N120CND,HGTG11N120	New and Original
	HGTG11N120CND?	NPTPIGBT TO247 43A 1200V
	HGTG11N120CND_NL	New and Original
	HGTG11N120CNP	New and Original
	HGTG11N120GND	New and Original
	HGTG11N120CND--	New and Original

HGTG11N12