PartNumber | HMC-ALH216-SX | HMC-ALH216 | HMC-ALH216-E |
Description | RF Amplifier GaAs HEMT WBand lo Noise amp 14-27 GHz | RF Amplifier GaAs HEMT WBand lo Noise amp, 14-27 GHz | IC RF AMP GP 14-27GHZ DIE 1=2PC |
Manufacturer | Analog Devices Inc. | Analog Devices Inc. | - |
Product Category | RF Amplifier | RF Amplifier | - |
RoHS | Y | Y | - |
Series | HMC-ALH216G | HMC-ALH216G | - |
Packaging | Gel Pack | Gel Pack | - |
Brand | Analog Devices | Analog Devices / Hittite | - |
Number of Channels | 1 Channel | 1 Channel | - |
Product Type | RF Amplifier | RF Amplifier | - |
Factory Pack Quantity | 2 | 50 | - |
Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | Die | - |
Type | - | Low Noise Amplifier | - |
Technology | - | GaAs | - |
Operating Frequency | - | 14 GHz to 27 GHz | - |
P1dB Compression Point | - | 14 dBm | - |
Gain | - | 18 dB | - |
Operating Supply Voltage | - | 4 V | - |
NF Noise Figure | - | 2.7 dB | - |
Operating Supply Current | - | 90 mA | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 85 C | - |
Input Return Loss | - | 15 dB | - |
Pd Power Dissipation | - | 1.4 W | - |