PartNumber | HMC415LP3E | HMC415LP3ETR |
Description | RF Amplifier InGaP HBT pow amp SMT, 4.9 - 5.9 GHz | RF Amplifier InGaP HBT pow amp SMT, 4.9 - 5.9 GHz |
Manufacturer | Analog Devices Inc. | Analog Devices Inc. |
Product Category | RF Amplifier | RF Amplifier |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | QFN-16 | QFN-16 |
Type | RF Amplifier | Power Amplifier |
Technology | GaAs InGaP | GaAs InGaP |
Operating Frequency | 5.9 GHz | 4.9 GHz to 5.9 GHz |
P1dB Compression Point | 23 dBm | 22.5 dBm |
Gain | 20 dB | 20 dB |
Operating Supply Voltage | 3 V | 3 V |
NF Noise Figure | 6 dB | 6 dB |
OIP3 Third Order Intercept | 32 dBm | 31 dBm |
Operating Supply Current | 285 mA | 285 mA |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C |
Series | HMC415 | HMC415 |
Packaging | Cut Tape | Reel |
Frequency Range | 4.9 GHz to 5.9 GHz | - |
Brand | Analog Devices / Hittite | Analog Devices / Hittite |
Number of Channels | 1 Channel | 1 Channel |
Input Return Loss | 10 dB | 10 dB |
Pd Power Dissipation | 1.105 W | 1.105 W |
Product Type | RF Amplifier | RF Amplifier |
Factory Pack Quantity | 50 | 500 |
Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits |
Unit Weight | 0.005820 oz | 0.002014 oz |
Product | - | InGaP/GaAs HBT |