PartNumber | HN1C03F-B(TE85L,F) | HN1C01FYTE85LF | HN1C03FU-A(TE85L,F |
Description | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-26-6 | SOT-26-6 | SMT-6 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Dual | Dual | Single |
Collector Emitter Voltage VCEO Max | 20 V | 50 V | 20 V |
Collector Base Voltage VCBO | 50 V | 60 V | 50 V |
Emitter Base Voltage VEBO | 25 V | 5 V | 20 V |
Collector Emitter Saturation Voltage | 42 mV | 0.1 V | 0.042 V |
Maximum DC Collector Current | 300 mA | 150 mA | 300 mA |
Gain Bandwidth Product fT | 30 MHz | 80 MHz | 30 MHz |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | HN1C03 | HN1C01 | - |
DC Current Gain hFE Max | 1200 | 400 | 1200 |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | Toshiba | Toshiba |
DC Collector/Base Gain hfe Min | 200 | 120 | 200 |
Pd Power Dissipation | 300 mW | 300 mW | 200 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000529 oz | 0.001058 oz | - |
Continuous Collector Current | - | 150 mA | 300 mA |
Technology | - | - | Si |