 |  | | |
| PartNumber | HN1C01FYTE85LF | HN1C01FYTE85LFCT-ND | HN1C01FYTE85LFDKR-ND |
| Description | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-26-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Series | HN1C01 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 150 mA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001058 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
HN1C01FYTE85LF | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | |
| HN1C01FYTE85LF | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | ||
| HN1C01FYTE85LFCT-ND | New and Original | ||
| HN1C01FYTE85LFDKR-ND | New and Original | ||
| HN1C01FYTE85LFTR-ND | New and Original |