HN4A

HN4A06J(TE85L,F) vs HN4A06J vs HN4A06J / 53

 
PartNumberHN4A06J(TE85L,F)HN4A06JHN4A06J / 53
DescriptionBipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
ManufacturerToshiba Semiconductor and StorageTOSHIBA-
Product CategoryTransistors (BJT) - ArraysTransistors (BJT) - Arrays-
Series---
PackagingDigi-ReelR Alternate Packaging--
Package CaseSC-74A, SOT-753--
Mounting TypeSurface Mount--
Supplier Device PackageSMV--
Power Max300mW--
Transistor Type2 PNP (Dual) Matched Pair, Common Emitter--
Current Collector Ic Max100mA--
Voltage Collector Emitter Breakdown Max120V--
DC Current Gain hFE Min Ic Vce200 @ 2mA, 6V--
Vce Saturation Max Ib Ic300mV @ 1mA, 10mA--
Current Collector Cutoff Max100nA (ICBO)--
Frequency Transition100MHz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
HN4A56JU(TE85L,F) Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz
HN4A51JTE85LF Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
HN4A06J(TE85L,F) Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
HN4A51JTE85LF Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
HN4A06J(TE85LF)CT-ND New and Original
HN4A06J(TE85LF)DKR-ND New and Original
HN4A51JTE85LFCT-ND New and Original
HN4A51JTE85LFDKR-ND New and Original
HN4A51JTE85LFTR-ND New and Original
HN4A56JU(TE85LF)CT-ND New and Original
HN4A56JU(TE85LF)DKR-ND New and Original
HN4A56JU(TE85LF)TR-ND New and Original
HN4A06J New and Original
HN4A06J / 53 New and Original
HN4A06J(TE85LF) New and Original
HN4A08J New and Original
HN4A51J New and Original
HN4A56JU New and Original
HN4A56JU(TE85L,F) New and Original
HN4A56JU(TE85LF) New and Original
HN4A71FK New and Original
HN4A74FK New and Original
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