HN4B

HN4B01JE(TE85L,F) vs HN4B01JE vs HN4B01JE(TE85LF)

 
PartNumberHN4B01JE(TE85L,F)HN4B01JEHN4B01JE(TE85LF)
DescriptionBipolar Transistors - BJT Vceo=-50V Vceo=50V
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.15 A--
Gain Bandwidth Product fT80 MHz--
Maximum Operating Temperature+ 150 C--
SeriesHN4B01--
PackagingReel--
BrandToshiba--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation100 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
HN4B01JE(TE85L,F) Bipolar Transistors - BJT Vceo=-50V Vceo=50V
HN4B04J(TE85L,F) Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
HN4B01JE(TE85L,F) Bipolar Transistors - BJT Vceo=-50V Vceo=50V
HN4B01JE(TE85LF)CT-ND New and Original
HN4B01JE(TE85LF)DKR-ND New and Original
HN4B01JE(TE85LF)TR-ND New and Original
HN4B04J(TE85LF)CT-ND New and Original
HN4B04J(TE85LF)DKR-ND New and Original
HN4B04J(TE85LF)TR-ND New and Original
HN4B01JE New and Original
HN4B01JE(TE85LF) New and Original
HN4B04J New and Original
HN4B04J(TE85LF) New and Original
HN4B06J New and Original
HN4B101J New and Original
HN4B101J (TE85L,F) New and Original
HN4B101J , 2SB1424-R New and Original
HN4B101J(TE85L New and Original
HN4B101J(TE85L,F New and Original
HN4B101J(TE85LF) New and Original
HN4B102J New and Original
HN4B102J (TE85L,F) New and Original
HN4B102J (TE85LF) New and Original
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