 |  | | |
| PartNumber | HN4C51J(TE85L,F) | HN4C51J(TE85LF)CT-ND | HN4C51J(TE85LF) |
| Description | Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-25-5 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 120 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.3 V | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Series | HN4C51 | - | - |
| DC Current Gain hFE Max | 700 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000494 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
HN4C51J(TE85L,F) | Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A | |
| HN4C51J(TE85L,F) | Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A | ||
| HN4C51J(TE85LF)CT-ND | New and Original | ||
| HN4C51J(TE85LF)DKR-ND | New and Original | ||
| HN4C51J(TE85LF)TR-ND | New and Original | ||
| HN4C51J(TE85LF) | New and Original |