 |  | | |
| PartNumber | HN4K03JUTE85LF | HN4K03JUTE85LFCT-ND | HN4K03JUTE85LFDKR-ND |
| Description | MOSFET N-Ch Sm Sig FET 0.1A 120V 10V VGSS | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-353-5 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 100 mA | - | - |
| Rds On Drain Source Resistance | 8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | HN4K03 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 0.15 us | - | - |
| Typical Turn On Delay Time | 0.16 us | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
HN4K03JUTE85LF | MOSFET N-Ch Sm Sig FET 0.1A 120V 10V VGSS | |
| HN4K03JUTE85LF | MOSFET N-CH 20V 0.1A USV | ||
| HN4K03JUTE85LFCT-ND | New and Original | ||
| HN4K03JUTE85LFDKR-ND | New and Original | ||
| HN4K03JUTE85LFTR-ND | New and Original |