HUF75339

HUF75339P3 vs HUF75339G3

 
PartNumberHUF75339P3HUF75339G3
DescriptionMOSFET 75a 55V 0.012Ohm NCh UltraFETMOSFET 75a 55V 0.012Ohm NCh UltraFET
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYE
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-247-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V
Id Continuous Drain Current75 A75 A
Rds On Drain Source Resistance12 mOhms12 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation200 W200 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameUltraFET-
PackagingTubeTube
Height16.3 mm20.82 mm
Length10.67 mm15.87 mm
SeriesHUF75339P3-
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width4.7 mm4.82 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time25 ns25 ns
Product TypeMOSFETMOSFET
Rise Time60 ns60 ns
Factory Pack Quantity800150
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns20 ns
Typical Turn On Delay Time15 ns15 ns
Part # AliasesHUF75339P3_NLHUF75339G3_NL
Unit Weight0.063493 oz1.340411 oz
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HUF75339P3 MOSFET 75a 55V 0.012Ohm NCh UltraFET
HUF75339G3 MOSFET 75a 55V 0.012Ohm NCh UltraFET
ON Semiconductor
ON Semiconductor
HUF75339G3 MOSFET N-CH 55V 75A TO-247
HUF75339P3 MOSFET N-CH 55V 75A TO-220AB
HUF75339P New and Original
HUF75339P3,75339P New and Original
HUF75339P3-NL New and Original
HUF75339S New and Original
HUF75339S3 Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
HUF75339S3S MOSFET TO-263
HUF75339S3ST Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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