HUF75652G

HUF75652G3 vs HUF75652G vs HUF75652G3 75652G

 
PartNumberHUF75652G3HUF75652GHUF75652G3 75652G
DescriptionMOSFET 75a 100VN-Ch MOSFET
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation515 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameUltraFET--
PackagingTube--
Height20.82 mm--
Length15.87 mm--
SeriesHUF75652G3--
Transistor Type1 N-Channel--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Fall Time190 ns--
Product TypeMOSFET--
Rise Time195 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns--
Typical Turn On Delay Time18.5 ns--
Part # AliasesHUF75652G3_NL--
Unit Weight0.225401 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HUF75652G3 MOSFET 75a 100VN-Ch MOSFET
ON Semiconductor
ON Semiconductor
HUF75652G3 MOSFET N-CH 100V 75A TO-247
HUF75652G New and Original
HUF75652G3,7652G3 New and Original
HUF75652G3I New and Original
HUF75652G3_NL Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
HUF75652G3 75652G New and Original
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