 | | |
| PartNumber | IAUC100N10S5N040ATMA1 | IAUC100N10S5L040ATMA1 |
| Description | MOSFET | MOSFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 100 A | 100 A |
| Rds On Drain Source Resistance | 5.6 mOhms | 4 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 78 nC | 78 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 167 W | 167 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 14 ns | 21 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5 ns | 3 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 30 ns |
| Typical Turn On Delay Time | 10 ns | 6 ns |
| Part # Aliases | IAUC100N10S5N040 | IAUC100N10S5L040 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IAUC100N10S5N040ATMA1 | MOSFET | |
| IAUC100N10S5L040ATMA1 | MOSFET | ||
| IAUC100N10S5L040ATMA1 | MOSFET_(75V 120V( | ||
| IAUC100N10S5N040ATMA1 | N-channel Enhancement mode Power MOSFET | ||
| IAUC100N10S5L040 | N-Ch OptiMOS-5 100V PG-TDSON-8 |