PartNumber | IAUT260N10S5N019ATMA1 | IAUT240N08S5N019ATMA1 | IAUT200N08S5N023ATMA1 |
Description | MOSFET MOSFET_(75V,120V( | MOSFET MOSFET_(75V,120V( | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | HSOF-8 | HSOF-8 | HSOF-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 80 V | 80 V |
Id Continuous Drain Current | 260 A | 240 A | 200 A |
Rds On Drain Source Resistance | 1.9 mOhms | 3 mOhms | 2.3 mOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | 2.2 V |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 128 nC | 130 nC | 110 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 300 W | 230 W | 200 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 38 ns | 36 ns | 32 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 12 ns | 11 ns |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 49 ns | 35 ns | 30 ns |
Typical Turn On Delay Time | 21 ns | 18 ns | 16 ns |
Part # Aliases | IAUT260N10S5N019 SP001676336 | IAUT240N08S5N019 SP001685094 | SP001688332 |